Low dose emitter vertical fuse
CA 1284232 C · Owner: Fairchild Semiconductor Corporation · Inventors: Jerome, Rick C.
Overview
Its claims, description and drawings are in the Canadian Patents Database.
Open the CIPO recordAbstract From the Canadian patent
A vertical fuse structure is disclosed which includes a lightly-doped emitter 30 to provide improved fusing characteristics. The structure includes a buried collector 12, an overlying base 18 and an, emitter 30 above the base 18. In the preferred embodiment, the emitter 30 extends approximately 0.2 microns from the upper surface and has an impurity concentration of about 8X1019 atoms of arsenic per cubic centimeter at the surface. The base region 18 is lightly doped and extends for approximately 0.46 microns below the emitter 30 to the collector 12. On the upper surface of emitter 30, a metal contact 35 is disposed. The fuse is blown by heating the metal 35 emitter 30 interface to its …
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Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Granted May 14, 1991. A Canadian patent filed before October 1, 1989 lasted 17 years from grant, so its term ended May 14, 2008.
- We check Canadian rights only. A patent in its family in another country could still be in force: check its family on Google Patents.
Timeline
Timeline From CIPO dates
Sources & verification
Official CIPO records
Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.