Resonant-tunneling device, and mode of device operation

Abstract From the Canadian patent

Abstract, A semiconductor integrated resonant-tunneling device having multiple negative-resistance regions, and having essentially equal current peaks in such regions, is useful as a highly compact element e.g, in apparatus designed for, ternary logic operations frequency multiplication, waveform scrambling memory, operation, parity-bit generation and coaxial-line driving. The device can be made by layer deposition on a substrate and includes a resonant-tunneling structure between contacts such that side-by-side first and third contacts are on one side and a second contact is on the opposite side of the resonant-tunneling structure. Disclosed further are (two-terminal) resonant-tunneling …