Method and measuring instrument for identifying the diffusion length ofthe minority charge carriers for non-destructive detection of flaws and impurities in semiconductor crystal bodies

Abstract From the Canadian patent

Method and measuring instrument for identifying the diffusion length of minority charge carriers for non-destructive detection of flaws and impurities in semiconductor crystal bodies. The method provides that the semiconductor crystal body is positioned between two electrolyte-filled measuring chamber halves and that the minority charge carriers of the photocurrent that results at a front side of the semiconductor crystal body due to irradiation is detected by an applied constant voltage between a backside of the semiconductor crystal body and a rear electrolyte at the backside of the semiconductor crystal body. Taking the thickness(D)of the semiconductor crystal body into consideration, …