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Expired Canadian patentCanada

Composite semiconductor device

CA 1279409 C · Owner: Tanaka, Tomoyuki · Inventors: Mori, Mutsuhiro; Tanaka, Tomoyuki; Yasuda, Yasumichi

CIPO record

Overview

Drawings and full text

Its claims, description and drawings are in the Canadian Patents Database.

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Abstract From the Canadian patent

Disclosed is a composite semiconductor device which comprises: a second and a third semiconductor regions of a second conductivity type formed in a first semiconductor region of a first conductivity type independently of each other and so as to be exposed on one main surface of a semiconductor substrate; a fourth and a fifth semiconductor regions of the first conductivity type formed in the second semiconductor region independently of each other and so as to be exposed on the one main surface of the semiconductor substrate; a first insulated gate electrode formed on the second semiconductor region located between the fifth and first semiconductor regions and exposed on the one main surface; …

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Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.

Why it's free to use

  • Granted January 22, 1991. A Canadian patent filed before October 1, 1989 lasted 17 years from grant, so its term ended January 22, 2008.
  • We check Canadian rights only. A patent in its family in another country could still be in force: check its family on Google Patents.
FiledJuly 13, 1987
GrantedJanuary 22, 1991
Term endedJanuary 22, 2008
Patent numberCA 1279409 C
Classification (IPC)H01L27/06 +2 more

Timeline

Timeline From CIPO dates

1988199119941997200020032006Application filedJuly 13, 1987Patent grantedJan 22, 1991Term endedJan 22, 2008

Sources & verification

Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.