Process of pulling a crystal
CA 1279239 C · Owner: Sumitomo Electric Industries, Ltd. · Inventors: Kotani, Toshihiro; Tada, Kohji
Overview
Its claims, description and drawings are in the Canadian Patents Database.
Open the CIPO recordAbstract From the Canadian patent
A process of pulling a crystal ABSTRACT OF THE DISCLOSURE, In a process for pulling a crystal such as Si Ge, GaAs, InP, GaP, InAs, AlAs, CdTe, CdSe ZnTe, HgTe, MnTe, Gd3Ga5O12, Bi12SiO20 and LiNbO3 from a raw material melt within a baffle plate whose bore diameter is gradually increased upward and which is arranged in such a manner that the melt inside and outside the baffle plate is in communication with each other through the small opening part at the end thereof, the baffle plate is moved relatively to the surface of the melt so as to increase the diameter of the melt surface inside the baffle plate with the increase of the diameter of the pulled crystal at the solid-liquid interface.
Read the whole patent
Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Granted January 22, 1991. A Canadian patent filed before October 1, 1989 lasted 17 years from grant, so its term ended January 22, 2008.
- We check Canadian rights only. A patent in its family in another country could still be in force: check its family on Google Patents.
Timeline
Timeline From CIPO dates
Sources & verification
Official CIPO records
Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.