Fabrication of semiconductor devices utilizing patterned metal layers
CA 1270070 C · Owner: Higashi, Gregg Sumio · Inventors: Higashi, Gregg Sumio
Overview
Its claims, description and drawings are in the Canadian Patents Database.
Open the CIPO recordAbstract From the Canadian patent
This invention relates to a method of fabricating semiconductor devices, which includes growing patterned metal layers. Patterned metal growth is obtained on a substrate by illuminating the substrate in the presence of a metal containing molecule adsorbed on the substrate. After initial illumination the, photoreacted molecules catalyze further metal growth without further illumination.
Read the whole patent
Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Granted June 5, 1990. A Canadian patent filed before October 1, 1989 lasted 17 years from grant, so its term ended June 5, 2007.
- We check Canadian rights only. A patent in its family in another country could still be in force: check its family on Google Patents.
Timeline
Timeline From CIPO dates
Sources & verification
Official CIPO records
Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.