Chemical vapor deposition method for the thin film of semiconductor

Abstract From the Canadian patent

A method for chemical vapor deposition of a thin film of semiconductor is disclosed, which is characterized in that in the, method wherein semiconductor thin films are deposited onto the substrates by allowing a susceptor, in the shape of a polygonal frustum fitted with a plurality of semiconductor substrates on the side faces thereof, to rotate in a vertical type reaction tube by, introducing source gases and carrier gas into the tube and by, heating the substrates to allow the source gases to react through thermal decomposition etc. The number of rotations of he susceptor is varied in terms of rectangular wave function trapezoidal wave function or sine wave function and the susceptor is …