Method of making a planar trench semiconductor structure

Abstract From the Canadian patent

A method is provided for making a planar surface on a semiconductor substrate having a trench or groove formed therein and filled with a material such as an organic material which may be used to electrically isolate one region of the substrate from an adjacent region of the substrate. The method includes the steps of forming a trench or groove in a semiconductor substrate through a surface thereof, depositing an organic or other filling material on the surface of the substrate and into the trench, forming a block of material over the trench on the filling material so as to extend a given distance over the surface of the substrate, etching the filling material with a given etchant so as to …