Electron gas hole gas tunneling transistor device

Abstract From the Canadian patent

A semiconductor device comprises a first semiconductor layer, a second semiconductor layer, and a third semiconductor layer formed between the first and second semiconductor layers and having a band gap narrower than that of each of the first and second layers. Band discontinuities in conduction bands and valence bands of the three layers form a barrier to the third semiconductor layer and a, tunneling current flows through the third semiconductor layer due to an internal electric field of the third semiconductor layer. The result is a device of ultrahigh speed operation.