Semiconductor device for generating an electron beam
CA 1262578 C · Owner: Van Gorkom, Gerardus G.P. · Inventors: Van Gorkom, Gerardus G.P.; Hoeberechts, Arthur M.E.
Overview
Its claims, description and drawings are in the Canadian Patents Database.
Open the CIPO recordAbstract From the Canadian patent
PHN11.670 21 16.6.1986, ABSTRACT:, Semiconductor device for generating an electron beam. By providing in a reverse biased junction cathode an intrinsic semiconductor region (5) between the n-type surface region (3) and the p-type zone (4) a maxi-, mum field is present over the intrinsic region (5) in the operating condition. The efficiency of the cathode is increased because avalanche multiplication can now occur over a greater distance, whilst in addition electrons to be emitted at a sufficient energy are generated by means of tunnelling.
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Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Granted October 31, 1989. A Canadian patent filed before October 1, 1989 lasted 17 years from grant, so its term ended October 31, 2006.
- We check Canadian rights only. A patent in its family in another country could still be in force: check its family on Google Patents.
Timeline
Timeline From CIPO dates
Sources & verification
Official CIPO records
Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.