Semiconductor super lattice device
CA 1262293 C · Owner: Sumitomo Electric Industries, Ltd. · Inventors: Matsui, Yuichi
Overview
Its claims, description and drawings are in the Canadian Patents Database.
Open the CIPO recordAbstract From the Canadian patent
A compound semiconductor device having a channel layer which is fabricated by alternately laminating an InxGa1-xAs compound semiconductor layer (0.7 ? x ? 1.0) with thickness of 16 atomic planes or less and an, InyGa1-yAs compound semiconductor layer (0 ? y ? 0.3) with thickness of 14 atomic planes or less, so that the thickness of the former is greater than that of the latter in, which n-type impurities are doped only in the InyGa1-yAs layer (0 ? y ? 0.3) side, and a ratio In/Ga on the whole is set at 1.1 or higher.
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Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Granted October 10, 1989. A Canadian patent filed before October 1, 1989 lasted 17 years from grant, so its term ended October 10, 2006.
- We check Canadian rights only. A patent in its family in another country could still be in force: check its family on Google Patents.
Timeline
Timeline From CIPO dates
Sources & verification
Official CIPO records
Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.