Field effect transistor
CA 1261977 A · Owner: Sumitomo Electric Industries, Ltd. · Inventors: Sasaki, Goro
Overview
Its claims, description and drawings are in the Canadian Patents Database.
Open the CIPO recordAbstract From the Canadian patent
A field effect transistor comprises an InP substrate, an n-type semiconductor layer formed on the InP substrate, a GaInAs layer formed on the n-type semiconductor layer, no impurities being added to the GaInAs layer, an AlInAs layer formed on the GaInAs layer a control electrode provided on the AlInAs layer and a, source electrode and a drain electrode provided at both the sides of the control electrode so as to make an ohmic contact to the GaInAs layer.
Read the whole patent
Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Granted September 26, 1989. A Canadian patent filed before October 1, 1989 lasted 17 years from grant, so its term ended September 26, 2006.
- We check Canadian rights only. A patent in its family in another country could still be in force: check its family on Google Patents.
Timeline
Timeline From CIPO dates
Sources & verification
Official CIPO records
Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.