Amorphous silicon semiconductor film and production process thereof

Abstract From the Canadian patent

This invention disclose an amorphous silicon semiconductor film containing at least hydrogen carbon and, oxygen as impurities and the method to produce it. The film is characterized in that the total quantity of carbon and oxygen in said film is at least 0.1 atom %. Since the film has small light absorption coefficient and its optical refractive index is controllable an excellent, window material for solar cell can be provided. As an adherence of the film with metal electrode as well as with transparent electrode is sufficient, the good reproducibility in making solar cell using the film of this invention as window material was realized.