Reactive planar magnetron sputtering of sio.sub.2

Abstract From the Canadian patent

Transparent films of silicon dioxide are produced on a substrate by sputtering silicon toward the substrate from a silicon target. The target is clamped to the remainder of the cathode along substantially the entire length of its edges by a, clamp set of at least one clamp. Each clamp has an outer surface extending upwardly away from the target surface to a position thereabove. The target is furthermore covered by a baffle disposed between the entire target and the substrate. Oxygen is admitted between the substrate and baffle at a rate to oxidize silicon sputtering toward the substrate while not oxidizing the, target. An rf discharge is applied to the substrate at a power density …