Ion selective field effect transistor sensor
CA 1251514 A · Owner: Kabushiki Kaisha Toshiba · Inventors: Sakai, Tadashi; Hiraki, Hideaki; Furukawa, Kazuyoshi
Overview
Its claims, description and drawings are in the Canadian Patents Database.
Open the CIPO recordAbstract From the Canadian patent
In a semiconductor sensor the surfaces of first and second, semiconductor substrates of a first conductivity type are planished and bonded together. Source and drain regions are formed by diffusing an impurity of second conductivity type. The source and drain regions are separated by an opening in the second substrate along a surface of which they are extended. An insulative layer is formed on the opposite surface of the second substrate and an inner surface of the opening.
Read the whole patent
Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Granted March 21, 1989. A Canadian patent filed before October 1, 1989 lasted 17 years from grant, so its term ended March 21, 2006.
- We check Canadian rights only. A patent in its family in another country could still be in force: check its family on Google Patents.
Timeline
Timeline From CIPO dates
Sources & verification
Official CIPO records
Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.