Process for forming semiconductor film and device used therefor

Abstract From the Canadian patent

A process for forming a film which comprises, in a forming film by glow discharge decomposition one or, more electrode pair rows each consisting of a plurality of high frequency electrode pairs arranged in a line are arranged in parallel and substrates are arranged on both sides of the electrode pair row substantially in parallel to the electrode pair row. According to the process damage caused by plasma to thin films can be minimized and there is not required a shield on the back of the RF electrode, while making it possible to obtain a thin film of large area.