Low resistivity hillock free conductors in vlsi devices
CA 1238429 A · Owner: Nortel Networks Limited · Inventors: Ho, Vu Q.; Nentwich, Heinz J.; Naguib, Hussein M.
Overview
Its claims, description and drawings are in the Canadian Patents Database.
Open the CIPO recordAbstract From the Canadian patent
Abstract of the Disclosure, Particularly for use in MOS (metal-oxide-semiconductor) VLSI (very large scale integrated) circuits an aluminum conductor, coated with a layer of refractory metal or refractory metal silicide has the advantages of being resistant both to electromigration and to hillock growth. By this invention, to reduce the resistivity of this composite conductor and to eliminate hillock formation the conductor, is subjected to an ion implantation step to cause interface mixing between the aluminum and the adjacent refractory metal or refractory metal silicide. - i -
Read the whole patent
Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Granted June 21, 1988. A Canadian patent filed before October 1, 1989 lasted 17 years from grant, so its term ended June 21, 2005.
- We check Canadian rights only. A patent in its family in another country could still be in force: check its family on Google Patents.
Timeline
Timeline From CIPO dates
Sources & verification
Official CIPO records
Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.