Semiconductor device
CA 1238122 A · Owner: Sony Corporation · Inventors: Kamata, Mikio; Watanabe, Seiichi; Kato, Yoji
Overview
Its claims, description and drawings are in the Canadian Patents Database.
Open the CIPO recordAbstract From the Canadian patent
A semiconductor device according to the invention comprises: a GaAs substrate; a GaAs layer of a low impurity concentration formed on the GaAs substrate; an AlGaAs layer of a low impurity concentration formed on the GaAs layer; a gate electrode of silicon or a compound of silicon and a metal formed on the AlGaAs layer; and a source electrode and a drain electrode formed on the AlGaAs layer. With this structure, a high electron mobility transistor in which a threshold voltage Vth is substantially 0 can be obtained.
Read the whole patent
Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Granted June 14, 1988. A Canadian patent filed before October 1, 1989 lasted 17 years from grant, so its term ended June 14, 2005.
- We check Canadian rights only. A patent in its family in another country could still be in force: check its family on Google Patents.
Timeline
Timeline From CIPO dates
Sources & verification
Official CIPO records
Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.