Method of making mosfets using silicate glass layer as gate edge masking for ion implantation

Abstract From the Canadian patent

A method for the manufacture of a large scale integration (LSI) MOS field effect transistor wherein a gate electrode is generated on a doped silicon substrate source/drain, regions are formed by ion implantation using the gate electrode as an implantation mask and the source/drain regions are shielded by means of an oxide layer extending to the sidewalls of the gate electrode so that the diffusion of the implanted source/drain regions under the gate electrode area are reduced. The specific improvement of the present invention involves applying a readily flowable silicate glass layer as a gate edge masking for the source/drain ion implantation after formation of the gate electrode, the …