Semiconductor device with hole conduction via strained lattice
CA 1236590 A · Owner: International Business Machines Corporation · Inventors: Wang, Wen-I; Esaki, Leo; Chang, Leroy L.
Overview
Its claims, description and drawings are in the Canadian Patents Database.
Open the CIPO recordAbstract From the Canadian patent
A field-effect transistor includes a conduction channel between a source terminal and a drain terminal which, channel employs holes as the charge carriers. The conduction channel is disposed within a layer of material comprising a group III-V compound of the periodic table and having a crystalline lattice structure which is stressed in two dimensions by means of epitaxial growth upon a thicker and rigid supporting layer comprising a different group III-V compound having a larger lattice spacing. The layer having the conduction channel is relatively thin being on the order of a few electron wavelength in thickness. The stretching of the layer having the conduction channel shift the energy …
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Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Granted May 10, 1988. A Canadian patent filed before October 1, 1989 lasted 17 years from grant, so its term ended May 10, 2005.
- We check Canadian rights only. A patent in its family in another country could still be in force: check its family on Google Patents.
Timeline
Timeline From CIPO dates
Sources & verification
Official CIPO records
Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.