Growth of semiconductors
CA 1236554 A · Owner: British Telecommunications Public Limited Company · Inventors: Nelson, Andrew W.; Westbrook, Leslie D.
Overview
Its claims, description and drawings are in the Canadian Patents Database.
Open the CIPO recordAbstract From the Canadian patent
A gas mixture containing phosphine and R1R2R3 In x R4R5R6 or R1R2 In x R4R5, where the Rs are alkyl groups is passed over a semiconductor substrate comprising indium and phosphorus so as to deposit a semiconductor material comprising indium and phosphorus, and the exposure of the substrate to phosphine is controlled to avoid or reduce transport of the substrate material. Thus, for example indium phosphide may be grown, onto corrugations in gallium indium arsenide phosphide the corrugations being undeformed during this growth. Such a growth step may be used in the production of distributed feedback semiconductor lasers operating near 1.55 nm
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Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Granted May 10, 1988. A Canadian patent filed before October 1, 1989 lasted 17 years from grant, so its term ended May 10, 2005.
- We check Canadian rights only. A patent in its family in another country could still be in force: check its family on Google Patents.
Timeline
Timeline From CIPO dates
Sources & verification
Official CIPO records
Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.