Precision high-value mos capacitors
CA 1232361 A · Owner: Fairchild Camera And Instrument Corporation · Inventors: Krishna, Surinder
Overview
Its claims, description and drawings are in the Canadian Patents Database.
Open the CIPO recordAbstract From the Canadian patent
A method for producing an improved capacitor in MOS technology utilizing a thin layer oxide dielectric to improve the active/parasitic capacitance ratio while maintaining a high breakdown voltage and a low leakage current. A polycrystalline silicon layer is formed over a silicon dioxide field region on a wafer of semiconductor silicon. Phosphorus ions are implanted in the polycrystalline silicon layer at an implant energy between approximately 80 and 100 keV. The surface of the polycrystalline silicon layer is oxidized to form an interpoly oxide, utilizing an oxidation temperature which, for the implant dosage of phosphorus ions used is sufficient to make the interpoly oxide layer …
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Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Granted February 2, 1988. A Canadian patent filed before October 1, 1989 lasted 17 years from grant, so its term ended February 2, 2005.
- We check Canadian rights only. A patent in its family in another country could still be in force: check its family on Google Patents.
Timeline
Timeline From CIPO dates
Sources & verification
Official CIPO records
Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.