Method for manufacturing green light emitting biodes

Abstract From the Canadian patent

In a method of manufacturing pure green light emitting diodes, after an n-type GaP epitaxial layer with thickness larger than or equal to a value for which the density of dislocation on the surface becomes less than or equal to 1 x 104 cm-2 is grown on an n-type GaP substrate, a p-type GaP epitaxial layer is grown on the above n-type epitaxial layer. Even with the use of a GaP substrate with normal dislocation density the den-, sity of dislocation in the neighborhood of the p-n junction becomes low and therefore GaP green light emitting diodes with high intensity of light emission is obtained.