Semiconductor device with annular region comprising a shallow portion
CA 1211866 A · Owner: Koninklijke Philips Electronics N.V. · Inventors: Coe, David J.
Overview
Its claims, description and drawings are in the Canadian Patents Database.
Open the CIPO recordAbstract From the Canadian patent
PHB 32.950 22, ABSTRACT:, At least one annular region (11,12,...) extends around an active device region (10) and is located within the spread of a depletion layer (25) from a reversebiased p-n junction (20) formed by the device region (10) to increase the breakdown voltage of the junction (20). The device region (10) and/or at least one inner annular region (11, 12,...) includes at least one shallower portion (10b, 11b, ...) which extends laterally outwards from a deep portion (10a, 11a, 12a, ...) and faces the surrounding annular region to change the spacing and depth relationship of these regions. This permits high punchthrough voltages to be achieved between the regions (10 11, 12, ...) …
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Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Granted September 23, 1986. A Canadian patent filed before October 1, 1989 lasted 17 years from grant, so its term ended September 23, 2003.
- We check Canadian rights only. A patent in its family in another country could still be in force: check its family on Google Patents.
Timeline
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Sources & verification
Official CIPO records
Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.