Cryogenic transistor with a superconducting base and a semiconductor-isolated collector

Abstract From the Canadian patent

Abstract of the Disclosure, This invention relates generally to cryogenic amplifying-switching devices and more specifically relates to a cryogenic transistor with a superconducting base and a collector isolated from the base by a semiconductor element. Still more specifically the invention is directed to a three terminal, transistor-like device which incorporates three metal layers. The first and second of the three layers are separated by an insulating tunnel barrier and the second and third layers are separated by a semiconductor layer of a thickness sufficient to inhibit tunnelling. The semiconductor layer has a barrier height (low) which is sufficient to permit the passage of …