High voltage mos/bipolar power transistor apparatus
CA 1209718 A · Owner: Fairchild Camera And Instrument Corporation · Inventors: Hu, Chenming
Overview
Its claims, description and drawings are in the Canadian Patents Database.
Open the CIPO recordAbstract From the Canadian patent
By, Chenming Hu, ABSTRACT, A high voltage MOS/BIPOLAR power transistor assembly is described comprising in a monolithic embodiment thereof, an N channel MOSFET which is integrated with a PNP transistor. A P+ substrate emitter provides hole injection into an N base layer thereby insuring through conductivity modulation a low "on" resistance. The base current IB which is regulated by the channel resistance eliminates hot spots, forward-biased second breakdown and current hopping.
Read the whole patent
Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Granted August 12, 1986. A Canadian patent filed before October 1, 1989 lasted 17 years from grant, so its term ended August 12, 2003.
- We check Canadian rights only. A patent in its family in another country could still be in force: check its family on Google Patents.
Timeline
Timeline From CIPO dates
Sources & verification
Official CIPO records
Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.