Method for electrical connections to silicon and an improved semiconductor device
CA 1208809 A · Owner: Control Data Corporation · Inventors: Shier, John S.
Overview
Its claims, description and drawings are in the Canadian Patents Database.
Open the CIPO recordAbstract From the Canadian patent
A method for producing an improved NPN semiconductor device which has a titanium-tungsten barrier metal only in the N type emitter contact windows is disclosed. A semiconductor wafer first undergoes the washed emitter process with the result that the N type collector and emitter contact windows are exposed to bare silicon and the P type contact windows are covered by a layer of silicon dioxide. The P type contact windows are then opened with the result that the N type collector and emitter contact windows and the P type, contact windows are exposed to bare silicon. The titanium-tungsten layer is then deposited across the wafer. The titanium-tungsten layer is patterned by etching so that …
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Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Granted July 29, 1986. A Canadian patent filed before October 1, 1989 lasted 17 years from grant, so its term ended July 29, 2003.
- We check Canadian rights only. A patent in its family in another country could still be in force: check its family on Google Patents.
Timeline
Timeline From CIPO dates
Sources & verification
Official CIPO records
Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.