Method and apparatus for increasing the durability and yield of thin film photovoltaic devices
CA 1207069 A · Owner: The University Of Delaware · Inventors: Phillips, James E.; Lasswell, Patrick G.
Overview
Its claims, description and drawings are in the Canadian Patents Database.
Open the CIPO recordAbstract From the Canadian patent
This invention relates to a method and apparatus for detecting the location of shorting defects in thin film semiconductor layers. Thin film photovoltaic cells having a pair of semiconductor layers between opaque and a transparent electrical contacts are manufactured in a method which includes the step of scanning one of the semiconductor layers to determine the location of any possible shorting defect. Upon the detection of such defect the, defect is eliminated to increase the durability and yield of the photovoltaic device.
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Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Granted July 2, 1986. A Canadian patent filed before October 1, 1989 lasted 17 years from grant, so its term ended July 2, 2003.
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Timeline
Timeline From CIPO dates
Sources & verification
Official CIPO records
Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.