Method of manufacturing semiconductor device

Abstract From the Canadian patent

Abstract, In manufacturing a field effect transistor a pattern, which has a wider upper layer and a narrower lower layer is formed at a gate electrode position. Using the pattern as a mask, first and second impurity regions are formed on both sides of a gate region by ion implantation. Subsequently, at least the lower layer is buried in a material such as an organic high polymer material having a selec-, tivity in etching characteristics with respect to the pattern material. After removing the lower layer an, electrode material is embedded in the resulting hole to form a gate electrode. The result is a method that while, using conventional photolithography enhances fabrication, at the …