Semiconductor device interconnection pattern with rim

Abstract From the Canadian patent

19, "ABSTRACT":, "Semiconductor device and method of manufacturing such a semiconductor device". With the aid of anisotropic etching techniques. such as plasma etching and reactive ion etching inter-, connection patterns can be obtained having accurately defined rims. According to the invention these rims are, provided inter alia at the area of contacts to be formed. The contacting zone thus formed which has an accurately, defined form, can be manufactured with rims of for example, a refractory metal or polycrystalline silicon. In the latter case, a semiconductor zone (emitter zone base contact zone, source, drain etc.) can be formed through the polycrystalline silicon in the subjacent …