Semiconductor device
CA 1202430 A · Owner: Hitachi, Ltd. · Inventors: Miyazaki, Takao; Nagata, Minoru; Nakazato, Kazuo
Overview
Its claims, description and drawings are in the Canadian Patents Database.
Open the CIPO recordAbstract From the Canadian patent
Abstract:, A semiconductor device comprises a semiconductor substrate of a first conductivity type a semiconductor, region formed on the substrate and a first insulation, film provided between the semiconductor region and the substrate. The substrate is isolated by the insulation film from a polycrystalline silicon layer formed in the periphery of the semiconductor region whereby to reduce the parasitic capacitance. The insulation film is stretched and arranged on the lower side of the semiconductor region. The result is a device with reduced base resistance and parasitic capacitance.
Read the whole patent
Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Granted March 25, 1986. A Canadian patent filed before October 1, 1989 lasted 17 years from grant, so its term ended March 25, 2003.
- We check Canadian rights only. A patent in its family in another country could still be in force: check its family on Google Patents.
Timeline
Timeline From CIPO dates
Sources & verification
Official CIPO records
Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.