Semiconductor device having a reduced surface field strength
CA 1201816 A · Owner: N.V. Philips Gloeilampenfabrieken · Inventors: Vaes, Henricus M.J.; Ludikhuize, Adrianus W.; Appels, Johannes A.
Overview
Its claims, description and drawings are in the Canadian Patents Database.
Open the CIPO recordAbstract From the Canadian patent
11, ABSTRACT:, A semiconductor device of the RESURF type having a substrate region (2) and a semiconductor layer (3) forming therewith a p-n junction (5) and of a conductivity type opposite to the substrate region (2) in which at, lease a zone (8) of a semiconductor circuit element is present. The semiconductor layer (3) is depleted at least locally throughout its thickness at a reverse voltage across the p-n junction (5) which is lower than the breakdown voltage. According to the invention the doping concentration of the semiconductor layer (3) is so high that at the breakdown voltage the depletion zone of the p-n junction (5) extends only over a part of the thickness of the semiconductor …
Read the whole patent
Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Granted March 11, 1986. A Canadian patent filed before October 1, 1989 lasted 17 years from grant, so its term ended March 11, 2003.
- We check Canadian rights only. A patent in its family in another country could still be in force: check its family on Google Patents.
Timeline
Timeline From CIPO dates
Sources & verification
Official CIPO records
Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.