Low temperature process for depositing epitaxial layers

Abstract From the Canadian patent

In certain semiconductor devices an epitaxial, layer of an oxide or sulfide in which the crystal, orientation is induced by the substrate provides, improved electrical and optical properties in the device. The formation of epitaxial oxide or sulfide layers requires high temperatures or generates charged particles or high energy radiation that damage the substrate and prevent optimum electrical performance of the device. This problem is overcome by exposing the substrate (20) at a low temperature to a chosen vapor phase reactant (from chamber 26) in the presence of neutral, charge-free oxygen atoms or sulfur atoms to produce a reaction between the atomic species and the vapor phase reactant …