Lateral junction field effect transistor device
CA 1193757 A · Owner: Koninklijke Philips Electronics N.V. · Inventors: Singer, Barry M.
Overview
Its claims, description and drawings are in the Canadian Patents Database.
Open the CIPO recordAbstract From the Canadian patent
Lateral junction field effect transistor device" A lateral junction field effect, transistor device comprises a substrate (11) of a first conductivity type and a semiconductor layer (12) of the second conductivity type. Furthermore the device includes both a surface semiconductor layer (16/20) of the first conductivity type located between the gate and drain contact regions (17/19, 15/21) of the device and a buried semiconductor layer (13) of the second conductivity type which extends beneath at least the drain contact region (15/21) and the surface semiconductor layer (16/20) of the device. The buried layer (13) may be in the form of a continuous layer extending beneath the gate, source, …
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Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Granted September 17, 1985. A Canadian patent filed before October 1, 1989 lasted 17 years from grant, so its term ended September 17, 2002.
- We check Canadian rights only. A patent in its family in another country could still be in force: check its family on Google Patents.
Timeline
Timeline From CIPO dates
Sources & verification
Official CIPO records
Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.