Semiconductive barium titanate
CA 1189770 A · Owner: Kabushiki Kaisha Toyota Chuo Kenkyusho · Inventors: Hioki, Tatsumi; Hirose, Yoshiharu; Doi, Haruo
Overview
Its claims, description and drawings are in the Canadian Patents Database.
Open the CIPO recordAbstract From the Canadian patent
Semiconductive barium titanate having a positive temperature coefficient of resistance comprises a barium titanate semiconductor including barium titanate and a small quantity of a doping element, and at least one additive selected from among silicon nitride, titanium nitride, zirconium nitride and silicon carbide. The semiconductive barium titanate of this invention has a sharp rise in the variation of specific resistivity with temperature change and a large specific resistivity ratio in the PTC temperature region, and can be produced with high reproducibility, since a widely differing quantity of the doping element can be effectively added to barium titanate.
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Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Granted July 2, 1985. A Canadian patent filed before October 1, 1989 lasted 17 years from grant, so its term ended July 2, 2002.
- We check Canadian rights only. A patent in its family in another country could still be in force: check its family on Google Patents.
Timeline
Timeline From CIPO dates
Sources & verification
Official CIPO records
Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.