Thin film heterojunction photovoltaic cells and methods of making the same

Abstract From the Canadian patent

A method of fabricating a thin film heterojunction photovoltaic cell which comprises depositing a film of a near intrinsic or n-type semiconductor compound formed of at least one of the metal elements of Class II B of the Periodic Table of Elements and at least tellurium and then heating said film at a temperature between about 250°C and 500°C for a time sufficient to convert said film to a suitably low resistivity p-type semiconductor compound. Such film may be deposited initially on the surface of an n-type semiconductor substrate. Alternatively there may be deposited on the converted film a layer of n-type semiconductor compound different from the film semiconductor compound. The …