Nonvolatile multilayer gate semiconductor memory device

Abstract From the Canadian patent

Abstract of the Disclosure, An improved retention non-volatile memory device having either a silicon gate-nitride-oxynitrideoxide-semiconductor substrate structure or a silicon gate-oxynitride-nitride-oxynitride-oxide-semiconductor substrate structure and a method of forming the same is described. The oxynitride layer(s) may have either uniform or varying oxygen and nitrogen composition resulting in ungraded or graded oxynitride layer(s) respectively. All the gate dielectric layers are formed by low pressure chemical vapor depositions at the same temperature.