Silicon avalanche photodiode with low k.sub.e.sub.f.sub.f and a method of making same
CA 1164988 A · Owner: Rca Inc. · Inventors: Mcintyre, Robert J.; Webb, Paul P.
Overview
Its claims, description and drawings are in the Canadian Patents Database.
Open the CIPO recordAbstract From the Canadian patent
11- RCA 76,602, SILICON AVALANCHE PHOTODIODE WITH LOW keff AND A METHOD OF MAKING SAME, ABSTRACT OF THE DISCLOSURE An n-p-.pi.-p+Si avalanche photodiode wherein the number of acceptors introduced into a Si body to form the p-type conductivity region has been reduced and this region extends a distance greater than about 35 micrometers into the body from the surface and wherein the n-type conductivity region extends a distance into the body such that the p-n junction is less than about 10 micrometers from the surface of the body. The method of the invention comprises introducing a reduced number of acceptors into the surface of the body, diffusing the acceptors into the body a distance …
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Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Granted April 3, 1984. A Canadian patent filed before October 1, 1989 lasted 17 years from grant, so its term ended April 3, 2001.
- We check Canadian rights only. A patent in its family in another country could still be in force: check its family on Google Patents.
Timeline
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Sources & verification
Official CIPO records
Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.