Semiconductor memory device
CA 1164562 A · Owner: Nippon Telegraph & Telephone Public Corporation · Inventors: Tsuchiya, Toshiaki; Itsumi, Manabu
Overview
Its claims, description and drawings are in the Canadian Patents Database.
Open the CIPO recordAbstract From the Canadian patent
A semiconductor memory device comprises a gate electrode provided via a gate insulating film on a semiconductor layer formed on a substrate and two diffused semiconductor regions provided to form a field effect transistor together with the gate electrode. An electrical charge is supplied to one of the diffused regions from the other region to thereby vary a width of a space charge layer appearing around the one diffused region so that informations "1" and "0" are selectively stored in the device. The stored information is read-out by detecting presence or absence of a buried channel between the space charge layer and the substrate.
Read the whole patent
Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Granted March 27, 1984. A Canadian patent filed before October 1, 1989 lasted 17 years from grant, so its term ended March 27, 2001.
- We check Canadian rights only. A patent in its family in another country could still be in force: check its family on Google Patents.
Timeline
Timeline From CIPO dates
Sources & verification
Official CIPO records
Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.