Method for making a semiconductor device
CA 1164107 A · Owner: Mostek Corporation · Inventors: Young, Ian A.; Johnson, Charles B.; Chan, Tsiu C.
Overview
Its claims, description and drawings are in the Canadian Patents Database.
Open the CIPO recordAbstract From the Canadian patent
A method for forming a semiconductor device includes the steps of forming an element site on a surface of a semiconductor substrate. A dopant is introduced into the semiconductor substrate at the element site to form a region. An oxide layer is formed over the element site. A layer of polysilicon is formed over a portion of the element site. An oxide layer is formed over the polysilicon layer and the doped portion of the substrate exposed at the element site.
Read the whole patent
Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Granted March 20, 1984. A Canadian patent filed before October 1, 1989 lasted 17 years from grant, so its term ended March 20, 2001.
- We check Canadian rights only. A patent in its family in another country could still be in force: check its family on Google Patents.
Timeline
Timeline From CIPO dates
Sources & verification
Official CIPO records
Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.