Method for achieving ideal impurity base profile in a transistor
CA 1160363 A · Owner: International Business Machines Corporation · Inventors: Crowder, Billy L.; Isaac, Randall D.; Ning, Tak H.
Overview
Its claims, description and drawings are in the Canadian Patents Database.
Open the CIPO recordAbstract From the Canadian patent
A method for making a transistor having base collector, and emitter regions, where the impurity doping profile of the intrinsic and extrinsic base regions can closely approximate that which is ideal for the transistor. The extrinsic and intrinsic base regions are formed in separate steps where, the extrinsic base region is formed first followed, by formation of the intrinsic base region. The portion of the extrinsic base region located over the area where the intrinsic base region is to be formed is removed, leaving an opening through which both the emitter and the intrinsic base regions are formed. Thus, the effect of the step in which the extrinsic base region is formed is removed prior …
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Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Granted January 10, 1984. A Canadian patent filed before October 1, 1989 lasted 17 years from grant, so its term ended January 10, 2001.
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Timeline
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Official CIPO records
Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.