Process of forming recessed dielectric regions in a monocrystalline silicon substrate

Abstract From the Canadian patent

Improved Process of Forming Recessed Dielectric Regions In A Monocrystalline Silicon Substrate Abstract, A method of forming surface planarity to a substrate during removal of excess dielectric material when fabricating recessed regions of dielectric material in a semiconductor device wherein a dielectric layer is formed on the surface of the silicon substrate, a relatively thick layer of polycrystalline silicon deposited over the SiO2 layer, openings formed through the polycrystalline layer and SiO2 layer and into the substrate to form trenches vapor, depositing a layer of dielectric material over the surface of the substrate to a depth sufficient to fill the trench, depositing a …