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Expired Canadian patentCanada

Self-aligned semiconductor method

CA 1138123 A · Owner: N.V. Philips Gloeilampenfabrieken · Inventors: Nicholas, Keith H.

CIPO record

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Abstract From the Canadian patent

1 PHB. 32 629, ABSTRACT:, Method for self-aligned manufacturing of an insulating layer on top of a doped region surrounding a semiconductor circuit element. According to the invention first an insulating layer is provided on a semiconductor body portion. Then a first masking layer is provided on top of part of the insulating layer. The doped region is formed by ion implantation through the insulating layer in the semiconductor surface not covered by the first masking layer. Then a second masking layer is provided on the first masking layer and on the insulating layer. After that the first masking layer with the portion of the second masking layer on top of it is removed. Then the uncovered …

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Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.

Why it's free to use

  • Granted December 21, 1982. A Canadian patent filed before October 1, 1989 lasted 17 years from grant, so its term ended December 21, 1999.
  • We check Canadian rights only. A patent in its family in another country could still be in force: check its family on Google Patents.
FiledJune 21, 1979
GrantedDecember 21, 1982
Term endedDecember 21, 1999
Patent numberCA 1138123 A
Classification (IPC)H01L21/31 +2 more

Timeline

Timeline From CIPO dates

1980198219841986198819901992199419961998Application filedJune 21, 1979Patent grantedDec 21, 1982Term endedDec 21, 1999

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Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.