Avalanche diode structure with improved efficiency and a diode using this structure
CA 1114521 A · Owner: Thomson-Csf · Inventors: Pearsall, Thomas P.
Overview
Its claims, description and drawings are in the Canadian Patents Database.
Open the CIPO recordAbstract From the Canadian patent
In an avalanche diode of gallium arsenide e.g. an IMPATT, diode, the optimization of the coefficient of ionization by impact in the case of impacts initiated by holes when the electrical field propels the carriers along the axis 1 1 1 of the monocrystal, has been utilized. The structure comprises a substrate of Ga-As with two large faces perpendicular to the axis 1 1 1 and layers obtained by epitaxial growth from one of these large faces. Arrangements are made to ensure that the electrical field is as parallel as possible to this crystalline axis. The improvement in efficiency is of the order of 20 %.
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Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Granted December 15, 1981. A Canadian patent filed before October 1, 1989 lasted 17 years from grant, so its term ended December 15, 1998.
- We check Canadian rights only. A patent in its family in another country could still be in force: check its family on Google Patents.
Timeline
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Sources & verification
Official CIPO records
Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.