Multidrain metal-oxide-semiconductor field-effect device

Abstract From the Canadian patent

A metal-oxide-semiconductor field-effect device for constituting a single logic inverter stage. It includes a multidrain transistor operating in enhancement mode and a load transistor, both of monochannel metal-oxide-semiconductor structure. The inverter transistor comprises a single gate region and several drain regions. The single gate region and the single channel region of the inverter multidrain transistor are superimposed on both implantation planes separated by a thin insulating layer, entirely surround each drain region of the inverter multidrain transistor and are entirely surrounded by the single source region of the inverter multidrain transistor.