Tunnel diode
CA 1105151 A · Owner: United States (Government Of The), As Represented By The Secretary Of The Army (The) · Inventors: Esaki, Leo
Overview
Its claims, description and drawings are in the Canadian Patents Database.
Open the CIPO recordAbstract From the Canadian patent
A tunnel diode is disclosed which includes a heterostructure consisting of a first layer of GaSb1-yAsy and a second layer of In1-xGaxAs. It is also disclosed that other alloys of Group III and Group V materials can be employed in a tunnel diode of the instant invention.
Read the whole patent
Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Granted July 14, 1981. A Canadian patent filed before October 1, 1989 lasted 17 years from grant, so its term ended July 14, 1998.
- We check Canadian rights only. A patent in its family in another country could still be in force: check its family on Google Patents.
Timeline
Timeline From CIPO dates
Sources & verification
Official CIPO records
Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.