Amorphous silicon photovoltaic device having an insulating layer

Abstract From the Canadian patent

Abstract, In a photovoltaic semiconductor device an, electrically insulating layer is between and in contact with a body of hydrogenated amorphous silicon such as one fabricated by a glow discharge in silane and a metallic film of a metal capable of forming a surface barrier junction with the amorphous silicon body. The insulating layer is of such a relatively thin thickness that charge carriers are capable of tunneling through the insulating layer. The insulating layer has been found to increase the open circuit voltage of the photovoltaic device without adversely affecting the short circuit current density of the device. - 1 -