Molecular-beam epitaxy system and method including hydrogen treatment
CA 1102013 A · Owner: International Business Machines Corporation · Inventors: Esaki, Leo; Chang, Chin-An; Chang, Leroy L.
Overview
Its claims, description and drawings are in the Canadian Patents Database.
Open the CIPO recordAbstract From the Canadian patent
Abstract of the Disclosure A system and method including the use of hydrogen in the molecular beam evaporation process for epitaxy growth such as in the formation of, GaAs or GaAlAs and Sn for n-type dopant impurity. In a molecular beam epitaxy system, a hydrogen beam is introduced and directed on the substrate during the epitaxy growth such that the presence of the hydrogen influences the physico-chemical process of surface interaction and therefore the quality of the epitaxy.
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Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Granted May 26, 1981. A Canadian patent filed before October 1, 1989 lasted 17 years from grant, so its term ended May 26, 1998.
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Timeline
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Official CIPO records
Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.