N-conductivity silicon monocrystals produced by neutron irradiation
CA 1100390 A · Owner: Siemens Aktiengesellschaft · Inventors: Reuschel, Konrad; Keller, Wolfgang; Spenke, Eberhard
Overview
Its claims, description and drawings are in the Canadian Patents Database.
Open the CIPO recordAbstract From the Canadian patent
A method for producing homogeneously doped silicon monocrystals with n-conductivity and adjustable dopant concentration by the irradiation, of silicon monocrystals with neutrons starting with a pre-doped p- or n-, conducting crystalline material having optional concentration fluctuation both radially and axially.
Read the whole patent
Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Granted May 5, 1981. A Canadian patent filed before October 1, 1989 lasted 17 years from grant, so its term ended May 5, 1998.
- We check Canadian rights only. A patent in its family in another country could still be in force: check its family on Google Patents.
Timeline
Timeline From CIPO dates
Sources & verification
Official CIPO records
Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.