Method of making silicone integrated circuits
CA 1100236 A · Owner: United States (Government Of The), As Represented By The Secretary Of The Army (The) · Inventors: Zeto, Robert J.; Marshall, Sidney
Overview
Its claims, description and drawings are in the Canadian Patents Database.
Open the CIPO recordAbstract From the Canadian patent
An enhancement type self-aligned silicon gate complementary metal oxide semiconductor (CMOS)/silicon on sapphire (SOS) structure is made by generating all gate oxides and oxide isolated regions with dry oxygen at pressures above 1 atmosphere and at temperatures of 800°C to 825°C using ion implantation for all doping operations and plasma definition of all masking dielectrics.
Read the whole patent
Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Granted April 28, 1981. A Canadian patent filed before October 1, 1989 lasted 17 years from grant, so its term ended April 28, 1998.
- We check Canadian rights only. A patent in its family in another country could still be in force: check its family on Google Patents.
Timeline
Timeline From CIPO dates
Sources & verification
Official CIPO records
Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.